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Insulator-to-metal transition driven by clustering of solitons in polyacetylene
(1997-03-15)
It's believed that the simple Su-Schrieffer-Heeger Hamiltonian can not predict the insulator to metal transition of transpolyacetylene (t-PA). The soliton lattice configuration at a doping level y=6% still has a semiconductor ...
Insulator-to-metal transition driven by clustering of solitons in polyacetylene
(1997-03-15)
It's believed that the simple Su-Schrieffer-Heeger Hamiltonian can not predict the insulator to metal transition of transpolyacetylene (t-PA). The soliton lattice configuration at a doping level y=6% still has a semiconductor ...
Theory of electrical characteristics for metal-oxide-insulator Schottky barrier and metal-insulator-metal structures
(1990-12-01)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics ...
Theory of electrical characteristics for metal-oxide-insulator Schottky barrier and metal-insulator-metal structures
(1990-12-01)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, the intimate metal-insulator and metal-oxide-insulator contact are discussed. Further, the steady-state characteristics ...
Effects of thermal annealing on the semi-insulating properties of radio frequency magnetron sputtering-produced germanate thin films
(Elsevier B.V. Sa, 2012-01-31)
We report the effects of thermal annealing on the semi-insulating properties of germanate thin films produced by a radio frequency magnetron sputtering process. Electrical and physical characterizations are presented. In ...
Effects of thermal annealing on the semi-insulating properties of radio frequency magnetron sputtering-produced germanate thin films
(Elsevier B.V. Sa, 2012-01-31)
We report the effects of thermal annealing on the semi-insulating properties of germanate thin films produced by a radio frequency magnetron sputtering process. Electrical and physical characterizations are presented. In ...
Collapse of the G d 3 + ESR fine structure throughout the coherent temperature of the Gd-doped Kondo Semiconductor CeF e 4 P 12
(American Physical Society, 2016-12-15)
Recent experiments on Gd3+ electron-spin resonance (ESR) in the filled skutterudite Ce1−xGdxFe4P12(x≈0.001), at temperatures where the host resistivity manifests a smooth insulator-metal crossover, provide evidence of the ...
THEORY OF ELECTRICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER HAVING EXPONENTIALLY DISTRIBUTED IMPURITY STATES AND METAL-INSULATOR METAL STRUCTURES
(Iop Publishing Ltd, 1992-03-30)
The metal-insulator or metal-amorphous semiconductor blocking contact is still not well understood. Here, we discuss the steady state characteristics of a non-intimate metal-insulator Schottky barrier. We consider an ...