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Physical properties characterization ofW03 films grown by hot-filatnent metal oxide deposition
(2012-11-27)
W03 is grown by hot-filament metal oxide deposition (HFMOD) technique under atmospheric pressure and an oxygen atmosphere. By X-ray diffraction obtains thatW03 presents mainly monoclinic crystalline phase. The chemical ...
Physical properties characterization ofW03 films grown by hot-filament metal oxide deposition
(2012-11-27)
W03 is grown by hot-filament metal oxide deposition (HFMOD) technique under atmospheric pressure and an oxygen atmosphere. By X-ray diffraction obtains that W03 presents mainly monoclinic crystalline phase. The chemical ...
Tecnologias em sistemas de circuitos integrados
(Universidade Tecnológica Federal do ParanáCampo MouraoBrasilDepartamento Acadêmico de EletrônicaEngenharia EletrônicaUTFPR, 2018-06-18)
The crescent semiconductor market aims more and more researches at it’s main technology, CMOS (Complementary metal-oxide-semiconductor). This paper is a literature review based on the databases IEEE and Science Direct. The ...
Photodetection with gate-controlled lateral BJTs from standard CMOS technology
(2013-04-08)
The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a ...
Photodetection with gate-controlled lateral BJTs from standard CMOS technology
(2013-04-08)
The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a ...
Electrical field effects in n-type MOSFET and metal–nonmetal transition
(2002-04)
The effects of disorder, correlation, external electric field, impurity concentration, and impurity location near and at the Si/SiO2 interface of a metal-oxide semiconductor field effect transistor (MOSFET), have been ...
X ray photoelectron analysis of oxide-semiconductor interface after breakdown in Al2O3/InGaAs stacks
(American Institute of Physics, 2014-08)
In this work, the post-breakdown characteristics of metal gate/Al2O3/InGaAs structures were studied using surface analysis by x ray photoelectron spectroscopy. The results show that for dielectric breakdown under positive ...
Fabrication and electrical characterization of new materials for metal-oxide-semiconductor technology
(Universidade Estadual Paulista (Unesp), 2019-12-05)
The Metal-Oxide-Semiconductor (MOS) technology has played a key role in the IC industry since its inception due to its excellent characteristics in digital applications, high scalability, ease of manufacturing processes, ...