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ON THE ORIGIN OF OVAL DEFECTS IN METALORGANIC MOLECULAR-BEAM EPITAXY OF INP
(Amer Inst PhysicsWoodbury, 1995)
Surface morphologies in GaAs homoepitaxy: Mound formation and evolution
(American Physical SocCollege PkEUA, 1998)
Projeto e construção de um sistema de crescimento epitaxial por feixe molecularProject and construction of a molecular beam epitaxy growth system
(Universidade Federal de ViçosaBRFísica Teórica e Computacional; Preparação e Caracterização de Materiais; Sensores e Dispositivos.Mestrado em Física AplicadaUFV, 2015)
Growth equations, discrete models, and MBE experiments
(World Scientific, 2002-10)
The question of the validity of the scaling ansatz in discrete deposition models and their connection with the scaling exponents of continuum differential equations is addressed. We specifically focus on the scaling ...
Growth and characterization of cubic InxGa1-xN epilayers on two different types of substrate
(Elsevier Science BvAmsterdamHolanda, 2005)
Equilibrium shape and nucleation on InP(0 0 1) surfaces: effect of surface steps
(Elsevier Science BvAmsterdamHolanda, 1998)
Effect of a GaAsP Shell on the Optical Properties of Self-Catalyzed GaAs Nanowires Grown on Silicon
(Amer Chemical SocWashingtonEUA, 2012)
Caracterização ótica de filmes finos de CdMnTe crescidos pela técnica de Epitaxia por Feixe MolecularOptical characterization of CdMnTe thin films grown by Molecular Beam Epitaxy technique
(Universidade Federal de ViçosaBRFísica Teórica e Computacional; Preparação e Caracterização de Materiais; Sensores e Dispositivos.Mestrado em Física AplicadaUFV, 2015)