Artículos de revistas
Mbe Growth And Characterization Of δ-doping In Gaas And Gaas/si
Registro en:
Surface Science. , v. 228, n. 1-3, p. 356 - 358, 1990.
396028
10.1016/0039-6028(90)90327-5
2-s2.0-0345858093
Autor
Basmaji P.
Ceschin A.M.
Siu Li M.
Hipolito O.
Bernussi A.A.
IIkawa F.
Motisuke P.
Institución
Resumen
We have investigated the δ-doped GaAs with different cap layer thickness, donor concentrations and intensities of pumping light grown by molecular beam epitaxy, using photoreflectance spectroscopy. The spectra show transitions that we assigned to confined electronic states in the potential of the δ-doping. These electronic state levels depend strongly on the cap layer thickness. © 1990. 228 1-3 356 358 Schubert, Fischer, Ploog, The delta-doped field-effect transistor (δFET) (1986) IEEE Transactions on Electron Devices, p. 625 Delagebeaudeuf, Linh, Charge control of the heterojunction two-dimensional electron gas for MESFET application (1981) IEEE Transactions on Electron Devices, p. 790 Shen, Parayanthal, Pollak, Tomkiewicz, Drummond, Schulman, (1986) Appl. Phys. Lett., 48, p. 653 Shanabrook, Glembock, Beard, (1987) Phys. Rev. B, 35, p. 2540 Zhou, Perry, Lee, Ma, Worlock, Zrenner, Koch, Ploog, (1988) Proc. 4th Int. Conf. on Superlattices, Microstructures and Microdevices, , Trieste Zrenner, Koch, Ploog, (1988) Surf. Sci., 196, p. 671 Schubert, Ploog, Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy (1986) Japanese Journal of Applied Physics, 25, p. 966 Schubert, Stark, Ullrich, Cunningham, (1988) Appl. Phys. Lett., 52, p. 1508 Ohbu, Ishino, Nakatani, Shimada, (1988) J. Appl. Phys., 64, p. 3295 Aspnes, (1980) Handbook of Semiconductors, 2, p. 109. , 2nd ed., T.S. Moss, North-Holland, New York, and references therein Schubert, Fischer, Ploog, The delta-doped field-effect transistor (δFET) (1986) IEEE Transactions on Electron Devices, p. 625