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Mostrando ítems 1-10 de 11
Indium Tin Oxide optical access for magnetic tunnel junctions in hybrid spintronic-photonic circuits
(IOP Publishing, 2020-10)
The all-optical magnetization reversal of magnetic layers, by picosecond optical pulses, is of particular interest as it shows the potential for energy-efficient and fast magnetic tunnel junction (MTJ) elements. This ...
Estudo do tunelamento em junções túnel de CoFeB=MgO=CoFeB
(Universidade Federal de Santa MariaBRFísicaUFSMPrograma de Pós-Graduação em Física, 2011-02-25)
Magnetic tunnel junctions (MTJ) ofCoFeB=MgO=CoFeB and multilayers of (CoFeB=MgO)x3 were produced using the technique of magnetron sputtering, where the insulating film was grown in an atmosphere reactive Ar +O. Multilayers ...
Magnetic Polarization of the Tunneling Current
(Ieee-inst Electrical Electronics Engineers IncPiscatawayEUA, 2013)
Spin-dependent transmission coefficients for magnetic tunnel junctions: Transport properties and temperature dependence
(Amer Physical SocCollege PkEUA, 2005)
Proposta de um encapsulamento dedicado para sensor magnético
(Universidade do Vale do Rio dos Sinos, 2016-06-17)
Nowadays there are magnetic sensors in a wide variety of equipment such as computers, cars, airplanes, medical and industrial instruments. In many of these applications the magnetic sensors offer safe and non-invasive means ...
Proposta de um encapsulamento dedicado para sensor magnético
(Universidade do Vale do Rio dos Sinos, 2016-06-17)
Nowadays there are magnetic sensors in a wide variety of equipment such as computers, cars, airplanes, medical and industrial instruments. In many of these applications the magnetic sensors offer safe and non-invasive means ...
Study of the influence of the interfaces on the properties of devices based on La1−xSrxMnO3
(2014-12-05)
Abstract. Developing devices to save information, like the magnetoresistive random access memories (MRAM), is a wide area of research now days. The manganites are among those materials to be used for this purpose. The ...