In this paper, the low-frequency (LF) noise in standard n-channel triple-gate Bulk FinFETs has been experimentally investigated with variation in the fin widths (W<inf>Fin</inf>), channel lengths (L) and gate dielectric. ...

Track-and-hold (T&H) circuits are used in a variety of applications. Noise is a key parameter in a T&H and can be traded for settling time or power consumption. The classical T&H noise design methodology considers only ...

This article aims at proposing a compact analytical model for the low-frequency noise (LFN) of junctionless nanowire transistors (JNTs), operating at different bias conditions and temperatures. The model is validated through ...

In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and ...

The low frequency noise performance of Gate-All-Around Nanowire (NW) or Nanosheet (NS) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, taking account of the impact of the device architecture, ...

This work reviews the low-frequency noise performance of different flavors of silicon Gate-All-Around Nanowire (NW) (or Nanosheet - NS) transistors. For the horizontal devices, the 1/f-like noise is dominated by the number ...

In this paper, the influence of proton irradiation is experimentally studied in triple-gate Bulk FinFETs with and without Dynamic Threshold MOS configuration (DTMOS). The drain current, transconductance, Drain Induced ...