GaSb and AlxGai.xSb thin layers were grown on (001) oriented GaSb substrates by liquid phase epitaxy technique at low temperatures. Until now, there are no previous reports on the growth of this alloy at temperatures lower ...

- High resolution X-ray diffraction profiles were obtained from Al,Ga 1 .,Sb layers grown on (00 l) GaSb substrates by Liquid Phase Epitaxy (LPE). The out of plane lattice parameter was estimated directly ...

Differences have been foundon the growth rate of epitaxial layers grown simultaneously on semi-insulating andP andN type (1 0 0) GaAs substrates from the same Ga–As liquidsolution. The layers were grown by LPE at 786 C ...

Raman scattering spectroscopy was used to measure and analyze the lattice vibrations in some quaternary Ga1-xInxAsySb1-y alloys with low (In, As) contents, (0.03 <x< 0.12 and 0.03 <y< 0.10). The layers were grown by ...

Raman scattering spectroscopy was used to measure and analyze the lattice vibrations in some quaternary Ga1-xInxAsySb1-y alloys with low (In, As) contents, (0.03 <x< 0.12 and 0.03 <y< 0.10). The layers were grown by ...