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Semi-analytical modeling of Ag and Au nanoparticles and fullerene (C60) embedded gate oxide compound semiconductor MOSFET memory devices
(Springer, 2012-12)
In this paper we present an analytical simulation study of Non-volatile MOSFET memory devices with Ag/Au nanoparticles/fullerene (C60) embedded gate dielectric stacks. We considered a long channel planar MOSFET, having a ...
Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor
(2005)
In this paper, we analyze the previously unexpected advantages of asymmetric channel engineering on the MOS resistance behavior in quasi-linear operation, such as used in integrated continuous-time tunable filters. The ...
Threshold voltage degradation for n-channel 4H-SiC power MOSFETs
(2020-03)
In this study, threshold voltage instability on commercial silicon carbide (SiC) power metal oxide semiconductor field electric transistor MOSFETs was evaluated using devices manufactured from two different manufacturers. ...
An explicit physical model for the long-channel MOS transistor including small-signal parameters
(Solid-State Electronics, 1995)
This paper presents a long-channel MOSFET model wherein the drain current, total charges and small-signal parameters for quasi-static operation are very simple functions of the inversion charge densities at the channel ...
Different stress techniques and their efficiency on triple-gate SOI n-MOSFETs
(2015)
© 2014 Elsevier Ltd. All rights reserved.Three techniques to implement mechanical stress in n-channel Multiple Gate MOSFETs (MuGFETs) are investigated through 3D simulations and transconductance measurements. They are: ...
Modeling a nanometer FD-SOI transistor with a basic all-region MOSFET model
(IEEE, 2020)
The suitability of a basic, long channel, compact, bulk transistor model coupled with look-up-tables (LUTs) for application to a 28 nm FD-SOI technology is evaluated through simulations. The parameters comprising the LUTs ...
Desempenho de transistores GC SOI MOSFETs submicrométricos
(Centro Universitário da FEI, São Bernardo do Campo, 2012)
Este trabalho tem como objetivo demonstrar o desempenho do transistor SOI de canal gradual (Graded-Channel - GC) submicrométrico a partir da comparação com o transistor SOI MOSFET convencional, detalhando suas características ...