Artigo
Advantages of the graded-channel SOI FD MOSFET for application as a quasi-linear resistor
Fecha
2005Registro en:
CERDEIRA, Antonio; ALEMÁN, Miguel; PAVANELLO, Marcelo A.; MARTINO, João Antonio; VANCAILLIE, Laurent; FLANDRE, Denis. Advantages of the Graded-Channel SOI FD MOSFET for Application as a Quasi-Linear Resistor. I.E.E.E. Transactions on Electron Devices, v. 52, n. 5, p. 967-972, 2005.
0018-9383
Autor
Cerdeira A.
Aleman M.A.
Pavanello M.A.
Martino J.A.
Vancaillie L.
Flandre D.
Resumen
In this paper, we analyze the previously unexpected advantages of asymmetric channel engineering on the MOS resistance behavior in quasi-linear operation, such as used in integrated continuous-time tunable filters. The study of the two major figures of merit in such applications as on-resistance and nonlinear harmonic distortion, is supported by both measurements and simulations of conventional and graded-channel (GC) fully depleted silicon-on-insultor (SOI) MOSFETs. The quasi-linear current-voltage characteristics of GC transistors show a decrease of the on-resistance as the length of the low doped region in the channel is increased, as well as an improvement in the third-order harmonic distortion (HD3), when compared with conventional transistors. A method for full comparison between conventional and GC SOI MOSFETs is presented, considering HD3 evolution with on-resistance tuning under low voltage of operation. Results demonstrate the significant advantages provided by the asymmetrical long channel transistors. © 2005 IEEE.