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Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
(Elsevier B.V., 2002-03-01)
We present first-principles calculations of the thermodynamic and electronic properties of the zinc-blende ternary InxGa1-xN. InxAl1-xN, BxGa1-xN, and BxAl1-xN alloys. They are based on a generalized quasi-chemical ...
Phase stability, chemical bonds, and gap bowing of InxGa1-xN alloys: Comparison between cubic and wurtzite structures
(Amer Physical SocCollege PkEUA, 2006)
Strain-induced ordering in InxGa1-xN alloys
(Amer Inst PhysicsMelvilleEUA, 2003)
Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
(Elsevier B.V., 2002-03-01)
We present first-principles calculations of the thermodynamic and electronic properties of the zinc-blende ternary InxGa1-xN. InxAl1-xN, BxGa1-xN, and BxAl1-xN alloys. They are based on a generalized quasi-chemical ...
Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
(Elsevier B.V., 2014)
Accurate band gaps of AlGaN, InGaN, and AlInN alloys calculations based on LDA-1/2 approach
(AMER INST PHYSICS, 2011)
We present parameter-free calculations of electronic properties of InGaN, InAlN, and AlGaN alloys. The calculations are based on a generalized quasichemical approach, to account for disorder and composition effects, and ...
Phase separation suppression in InGaN epitaxial layers due to biaxial strain
(American Institute of Physics (AIP), 2002-02-04)
Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam ...
Phase separation suppression in InGaN epitaxial layers due to biaxial strain
(American Institute of Physics (AIP), 2002-02-04)
Phase separation suppression due to external biaxial strain is observed in InxGa1-xN alloy layers by Raman scattering spectroscopy. The effect is taking place in thin epitaxial layers pseudomorphically grown by molecular-beam ...
Phase separation suppression in InGaN epitaxial layers due to biaxial strain
(American Institute of Physics (AIP), 2014)