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Análise da Resistência Série Fonte-Dreno de Transistores HEMTs (“High Electron Mobility Transistor”)
(Universidade Estadual Paulista (Unesp), 2021-12-03)
This work has as objective the study of High Electron Mobility Transistors' Source-Drain Series Resistance (RSD) with twelve different configurations of Channel Length and Channel Width for four Dies (blades) operating at ...
Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology
(1999-12-01)
The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz ...
Análise do comportamento da corrente de porta em transistores de alta mobilidade de elétrons
(Universidade Estadual Paulista (Unesp), 2021-12-02)
Esse trabalho tem como foco principal estudar um transistor de efeito de campo do tipo HEMT(High Eléctron Mobility Transistor - Transistor de Alta Mobilidade e Elétrons). Um transistor sem óxido de porta e com uma construção ...
Low-Voltage, Flexible, and Self-Encapsulated Ultracompact Organic Thin-Film Transistors Based on Nanomembranes
(2018-09-12)
Organic thin-film transistors (OTFTs) are an ever-growing subject of research, powering recent technologies such as flexible and wearable electronics. Currently, many studies are being carried out to push forward the ...
Analog performance of GaN/AlGaN high-electron-mobility transistors
(2021-09-01)
In this paper, the analog properties of advanced GaN/AlGaN High-Electron-Mobility Transistors (HEMTs) are studied as a function of temperature (T). The drain current, the threshold voltage, the transconductance and the ...
Printed in-plane electrolyte-gated transistor based on zinc oxide
(2022-03-01)
Printed electronics is a reputable research area that aims at simple alternatives of manufacturing low-cost, eco-friendly, and biodegradable electronic devices. Among these devices, electrolyte-gated transistors (EGTs) ...
Gaas/algaas nanoheterostructures: simulation and application on high mobility transistors
(Universidad Nacional de Colombia - Facultad de Ingeniería, 2011)
This work analyses the features of GaAs/AlGaAs heterostructure, highlighting semiconductor junction properties. Charge confinement was produced when two materials having different band-gap were fixed; such high electron ...
Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors
(2021-09-01)
In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and ...
Análise da mobilidade em transistores SOI de canal gradual visando simulações de circuitos
(Centro Universitário FEI, São Bernardo do Campo, 2020)
de-Semiconductor Field Effect Transistor) é um transistor SOI cujo canal está dividido em duas regiões: uma região fortemente dopada e outra região fracamente dopada. A redução da concentração de dopantes na região do canal ...