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Analog performance of GaN/AlGaN high-electron-mobility transistors
(2021-09-01)
In this paper, the analog properties of advanced GaN/AlGaN High-Electron-Mobility Transistors (HEMTs) are studied as a function of temperature (T). The drain current, the threshold voltage, the transconductance and the ...
Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors
(2021-09-01)
In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and ...
Effects of hydrostatic pressure and applied electric fields on the exciton states in GaAs-(Ga,Al)As quantum wells
(Elsevier Science BvAmsterdamHolanda, 2005)
Intermediate role of gallium in oxidic glasses: solid state NMR structural studies of the Ga2O3-NaPO3 system
(American Chemical Society - ACSWashington, DC, 2014-07)
A series of (NaPO3)1-x(Ga2O3)x glasses (0 ≤ x ≤ 0.35) prepared by conventional melt-quenching methods has been structurally characterized by various complementary high resolution one-dimensional and two-dimensional (2D) ...
Estudio de Confiabilidad en Diodos Basados en AlGaN/GaN Durante el Estado de Encendido
(Escuela Politécnica Nacional, 2022)
Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations
(Applied Surface Science, 2018)
Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires
(American Institute of Physics - AIPCollege Park, 2013-02)
Photoluminescence (PL) of high-density GaAs nanowires (NWs) encapsulated by a double AlGaAs/GaAs shell is studied. Two lines are found and assigned to the radiative recombinations of photoexcited electrons confined in the ...