Artículos de revistas
Effects of hydrostatic pressure and applied electric fields on the exciton states in GaAs-(Ga,Al)As quantum wells
Registro en:
Physica B-condensed Matter. Elsevier Science Bv, v. 367, n. 41730, n. 267, n. 274, 2005.
0921-4526
WOS:000232076000036
10.1016/j.physb.2005.06.027
Autor
Raigoza, N
Duque, CA
Reyes-Gomez, E
Oliveira, LE
Institución
Resumen
The effects of both hydrostatic pressure and electric fields applied perpendicular to the layers on the direct-exciton states in single GaAs-(Ga,AI)As quantum wells are studied. Theoretical calculations are performed within the variational procedure, in the framework of the effective-mass and non-degenerate parabolic-band approximations. Both heavy- and light-hole exciton energies and corresponding quantum-confined Bohr radii are obtained. The pressure coefficient is also theoretically evaluated and found in good agreement with available experimental measurements. (c) 2005 Elsevier B.V. All rights reserved. 367 41730 267 274