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Estudo das estruturas Fe:GaAs e Fe:Cs:GaAs por espectroscopia de fotoelétrons excitados por raios-X
(Universidade Federal de Minas GeraisUFMG, 2005-07-11)
We used X-ray Photoelectron Spectroscopy to study the growth of iron on GaAs(100) mediated by Cesium. All GaAs substrates were Si 5 x 1017 cm-3 n-doped layers prepared by Molecular Beam Epitaxy. Iron was deposited by e-beam ...
Electric force microscopy techniques on GaAs mesoscopic structures
(Universidade Estadual Paulista (Unesp), 2018-03-29)
As técnicas de microscopia de sonda Kelvin (KPFM) e de microscopia de força eletrostática (EFM) são amplamente utilizadas para analisar a distribuição do potencial de superfície, porém com pouca aplicação em nanoestruturas ...
Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations
(Applied Surface Science, 2018)
Study of the influence of indium segregation on the optical properties of InGaAs/GaAs quantum wells via split-operator method
(A V S AMER INST PHYSICS, 2010)
In the case of quantum wells, the indium segregation leads to complex potential profiles that are hardly considered in the majority of the theoretical models. The authors demonstrated that the split-operator method is ...
Caracterización óptica por fotorreflectancia a temperatura variable de heteroestructuras semiconductoras ZnSe/GaAs y CdTe/GaAs
(2005)
En este trabajo se reporta el estudio de esfuerzos presentes en heteroestructura II-VI/GaAs como son el ZnSe/GaAs y el CdTe/GaAs, realizados mediante la técnica de Fotorreflectancia (FR) en un rango de temperaturas 12≤T≤300 ...
Engineering of 3D self-directed quantum dot ordering in multilayer InGaAs/GaAs nanostructures by means of flux gas composition
(IOP PUBLISHING LTD, 2008)
Lateral ordering of InGaAs quantum dots on the GaAs (001) surface has been achieved in earlier reports, resembling an anisotropic pattern. In this work, we present a method of breaking the anisotropy of ordered quantum ...
Effect of a GaAsP Shell on the Optical Properties of Self-Catalyzed GaAs Nanowires Grown on Silicon
(Amer Chemical SocWashingtonEUA, 2012)
In0.49Ga0.51P growth on pre-patterned GaAs substrates by chemical beam epitaxy
(Elsevier Science BvAmsterdamHolanda, 1998)
Photoelectron spectroscopic study of amorphous GaAsN films
(Amer Inst PhysicsMelvilleEUA, 2000)
Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate
(Iop Publishing Ltd, 1999-04-01)
Cubic GaN layers are grown by molecular beam epitaxy on (001) GaAs substrates. Optical micrographs of the GaN epilayers intentionally grown at Ga excess reveal the existence of surface irregularities such as bright rectangular ...