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Transporte electrónico en silicio poroso nanoestructurado
(2013-03-25)
En este trabajo se fabricaron dispositivos basados en silicio poroso nanoestructurado, con el fin de estudiar y caracterizar sus propiedades de transporte eléctrico, buscando acumular datos que permitan en un futuro ...
Información General: Centro de Estudios de Semiconductores
(SABER ULA, 2006)
Información General: Centro de Estudios de Semiconductores
(SABER ULA, 2006)
Electronic and thermal properties of non-stoichiometric and doped cobaltum antimonide
(Institute of Physics Publishing, 2018)
The electronic, vibrational and thermal properties of stoichiometric and non-stoichiometric cobalt antimonide CoSb x (x = 2.81, 2.875, and 3) are investigated by means of first principle calculations and thermal measurements. ...
Electrical properties of electrochemically doped organic semiconductors using light-emitting electrochemical cells
(2016-08-01)
We present a study of the electrical properties of electrochemically doped conjugated polymers using polymeric light-emitting electrochemical cells (PLECs) and interpreting the results according to a phenomenological model ...
Electrical properties of the ternary compound Cu2GeSe3.
(SABER ULA, 2008)