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Uma equação de quarta ordem relacionada ao crescimento epitaxial
(Universidade Federal de Juiz de Fora (UFJF)BrasilICE – Instituto de Ciências ExatasMestrado Acadêmico em MatemáticaUFJF, 2019)
Projeto e construção de um sistema de crescimento epitaxial por feixe molecularProject and construction of a molecular beam epitaxy growth system
(Universidade Federal de ViçosaBRFísica Teórica e Computacional; Preparação e Caracterização de Materiais; Sensores e Dispositivos.Mestrado em Física AplicadaUFV, 2015)
Chemical synthesis and epitaxial growth methods for the preparation of ferroelectric ceramics and thin films
(2018-01-01)
Ferroelectric materials have constantly attracted scientific interest because of their technological applications. The efficiency of ferroelectrics materials is related to the way they are processed because characteristics ...
Polarity-Induced Selective Area Epitaxy of GaN Nanowires
(Amer Chemical Soc, 2017-01-01)
We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The,approach is based on the fact that these nanostructures do not form in plasma-assisted molecular beam epitaxy on structurally ...
On the onset of InAs islanding on InP: influence of surface steps
(Elsevier Science BvAmsterdamHolanda, 1997)
Roughness of CdTe thin films grown on glass by hot wall epitaxy
(Journal of Physics, 2018)
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
(Amer Chemical Soc, 2017-09-01)
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on,graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene ...