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Optical properties of remotely doped parabolic quantum wells
(Elsevier B.V., 2003-04-01)
This work is intended to report on optical measurements in a parabolic quantum well with a two dimensional-three dimensional electron gas. Photoluminescence results show broad spectra which are related to emission involving ...
Optical properties of remotely doped parabolic quantum wells
(Elsevier B.V., 2003-04-01)
This work is intended to report on optical measurements in a parabolic quantum well with a two dimensional-three dimensional electron gas. Photoluminescence results show broad spectra which are related to emission involving ...
Thomas-Fermi approximation in two p-type delta-doped quantum wells in GaAs and Si
(Revista Mexicana de Física, 2009)
Spontaneous spin polatization in doped semiconductor quantum wells
(Springer, 2005-12)
We calculate the critical density of the zero-temperature, first-order ferromagnetic phase transition in n-doped GaAs/AlGaAs quantum wells. We predict that this transition could be observed in narrow quantum wells at ...
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well
(Elsevier B.V., 2012-01-01)
In this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000 angstrom up to 3000 angstrom) were investigated by means of photoluminescence (PL) measurements. In order to achieve the ...
Indirect optical transitions from carriers trapped on the delta doping and on the parabolic quantum well
(Elsevier B.V., 2012-01-01)
In this work, doped AlGaAs/GaAs parabolic quantum wells (PQW) with different well widths (from 1000 angstrom up to 3000 angstrom) were investigated by means of photoluminescence (PL) measurements. In order to achieve the ...
Optical properties of remotely doped parabolic quantum wells
(Elsevier B.V., 2014)
Electronic structure of holes in modulation doped p-Si1-xGex/Si strained quantum wells in a magnetic field
(Pergamon-elsevier Science LtdOxfordInglaterra, 1998)
INTERBAND-TRANSITIONS OF SI DELTA-DOPED LAYERS IN PARA-TYPE GAAS
(John Wiley & Sons IncNew York, 1990)