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Residual carbon and carrier concentration in InGaP layers grown by chemical beam epitaxy
(Elsevier Science SaLausanneSuíça, 2003)
Growth of Be-doped homoepitaxial GaAs films on rough substrates
(Elsevier Science BvAmsterdamHolanda, 1999)
Self-assembled islands on strained systems: Control of formation, evolution, and spatial distribution
(American Physical SocCollege PkEUA, 1998)
Evidence of formation of Si-C bonds during growth of Si-doped III-V semiconductor compounds
(Amer Inst PhysicsMelvilleEUA, 2005)
REAL-TIME OPTICAL DIAGNOSTICS FOR MEASURING AND CONTROLLING EPITAXIAL-GROWTH
(Elsevier Science SaLausanneSuíça, 1993)
Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In0.68Ga0.32As0.7P0.3) barriers for high current injection efficiency
(Elsevier Science BvAmsterdamHolanda, 2010)
Influence of rough substrates on the morphology evolution of epitaxial films
(Amer Physical SocCollege PkEUA, 2000)
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
(Amer Chemical Soc, 2017-09-01)
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on,graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene ...
On the onset of InAs islanding on InP: influence of surface steps
(Elsevier Science BvAmsterdamHolanda, 1997)
Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy
(Elsevier Science BvAmsterdamHolanda, 2004)