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Advantages of graded-channel SOI nMOSFETs for application as source-follower analog buffer
(PERGAMON-ELSEVIER SCIENCE LTD, 2008)
In this work the performance of graded-channel (CC) SOI MOSFETs operating as source-follower buffers is presented. The experimental analysis is performed by comparing the gain and linearity of buffers implemented with CC ...
An accurate low-voltage analog memory-cell with built-in multiplication
(2001-01-01)
A CMOS memory-cell for dynamic storage of analog data and suitable for LVLP applications is proposed. Information is memorized as the gate-voltage of input-transistor of a gain-boosting triode-transconductor. The enhanced ...
An accurate low-voltage analog memory-cell with built-in multiplication
(2001-01-01)
A CMOS memory-cell for dynamic storage of analog data and suitable for LVLP applications is proposed. Information is memorized as the gate-voltage of input-transistor of a gain-boosting triode-transconductor. The enhanced ...
Design of a LNA and a Gilbert Cell Mixer MMICs with a GaAs PHEMT technology
(1999-12-01)
The design of a Gilbert Cell Mixer and a low noise amplifier (LNA), using GaAs PHEMT technology is presented. The compatibility is shown for co-integration of both block on the same chip, to form a high performance 1.9 GHz ...
On the electrochemical behavior of Cu-16%Zn-6.5%Al alloy containing the β'-phase (martensite) in borate buffer
(2013-07-11)
In this work, the electrochemical behavior of Cu-16(wt.%)Zn-6.5(wt.%)Al alloy containing the β'-phase (martensite) was studied in borate buffer solution (pH 8.4) by means of open-circuit potential (EOC), electrochemical ...
On the electrochemical behavior of Cu-16%Zn-6.5%Al alloy containing the β'-phase (martensite) in borate buffer
(2013-07-11)
In this work, the electrochemical behavior of Cu-16(wt.%)Zn-6.5(wt.%)Al alloy containing the β'-phase (martensite) was studied in borate buffer solution (pH 8.4) by means of open-circuit potential (EOC), electrochemical ...