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CdSe/CdTe interface band gaps and band offsets calculated using spin-orbit and self-energy corrections
(ELSEVIER SCIENCE BVAMSTERDAM, 2012)
We performed ab initio calculations of the electronic structures of bulk CdSe and CdTe, and their interface band alignments on the CdSe in-plane lattice parameters. For this, we employed the LDA-1/2 self-energy correction ...
CdSe/CdTe interface band gaps and band offsets calculated using spin-orbit and self-energy corrections
(ElsevierAmsterdam, 2012)
Carrier Frequency Offset Compensation for OFDMA Systems Using Circular Banded Matrices
(Planta Piloto de Ingeniería Química, 2013-07)
Orthogonal frequency division multiple access (OFDMA) is a multiuser communication technique that allocates to each user a set of orthogonal carriers. In the presence of carrier frequency offset (CFO) the orthogonality ...
Accurate prediction of the Si/SiO(2) interface band offset using the self-consistent ab initio DFT/LDA-1/2 method
(AMER PHYSICAL SOC, 2009)
We use the density functional theory/local-density approximation (DFT/LDA)-1/2 method [L. G. Ferreira , Phys. Rev. B 78, 125116 (2008)], which attempts to fix the electron self-energy deficiency of DFT/LDA by half-ionizing ...
PHOTOREFLECTANCE IN GE/GE0.7SI0.3 STRAINED-LAYER SUPERLATTICES
(American Physical SocCollege PkEUA, 1992)
Determination of the valence band offset of a mu c-C/c-Si(100) heterojunction using low energy yield spectroscopy
(Iop Publishing LtdBristolInglaterra, 1999)
A PHOTOMODULATED SPECTROSCOPY STUDY OF INXGA1-XAS/GAAS SUPERLATTICES AND QUANTUM-WELLS
(Amer Inst PhysicsWoodbury, 1991)
Concentration and band offset dependence of the electronic basic transition of cubic InxGa1−xN/InyGa1−yN quantum wells
(Elsevier, 2009-08)
We calculate the transition energy from the first level of holes to the first level of electrons for cubic InxGa1−xN/InyGa1−yN quantum wells. We employ the empirical tight binding approach with an sp3s* orbital basis, ...
First-principles calculations of the electrical properties of LaAlO3 and its interface with Si
(Amer Physical SocCollege PkEUA, 2005)