Buscar
Mostrando ítems 1-10 de 172
Influence of the band bending on the photoconductivity of Li-doped ZnO microwires
(Pergamon-Elsevier Science Ltd, 2017-05)
Combining photoconductivity and photoluminescence measurements we have studied the band bending behavior with the Li-doping content in ZnO microwires. Our results reveal the presence of in-gap acceptor levels with energies ...
Bending Sensor Based on S-Band Depressed Cladding Erbium-Doped Fiber
(Ieee-inst Electrical Electronics Engineers IncPiscatawayEUA, 2010)
Modification of the photoconducting properties of ZnO thin films via low-temperature annealing and air exposure
(IOP Publishing, 2020-10)
A simple thermal annealing at 150 C followed by exposure to air ambient conditions in epitaxial ZnO thin films produces a photoconductivity enhancement and a reduction of the energy gap. The first effect is related to a ...
Optical Sensing Systems Based on Depressed Cladding Erbium Doped Fiber
(Ieee-inst Electrical Electronics Engineers IncPiscatawayEUA, 2012)
Raman and infrared investigations of glass and glass-ceramics with composition 2Na2O·1CaO·3SiO2
(Materials Research Society, 1994-01-01)
Precursor glass and glass-ceramics with molar composition 2Na2O·1CaO·3SiO2 are studied by infrared, conventional, and microprobe Raman techniques. The Gaussian deconvoluted Raman spectrum of the glass presents bands at 625 ...
Raman and infrared investigations of glass and glass-ceramics with composition 2Na2O·1CaO·3SiO2
(Materials Research Society, 2014)
Raman and infrared investigations of glass and glass-ceramics with composition 2Na2O·1CaO·3SiO2
(Materials Research Society, 2014)
Localized Charge Transfer Process And Surface Band Bending In Methane Sensing By Gan Nanowires
(AMER CHEMICAL SOCWASHINGTON, 2015)
Effect of anilines as a synthesis component on the hydrophobicity of silica
(Elsevier, 2005-12)
This chapter investigates the grafting process on silica prepared by sol–gel. The principle of the investigation work consists in comparing the grafting of anilines, with different active groups, on silica to obtain different ...
Electronic mechanism for resistive switching in metal/insulator/metal nanodevices
(Iop Publishing Ltd, 2020-07-15)
Passing current at given threshold voltages through a metal/insulator/metal sandwich structure device may change its resistive state. Such switching has been rationalized by ion drift models, or changes in electronic states, ...