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Filters
(2017-01-31)
A filter can be a device, or even a material, that is used either to suppress or minimize signals of certain frequencies.
Proton Radiation Influence on SOI FinFET Trade-Off between Transistor Efficiency and Unit Gain Frequency
(Ieee, 2016-01-01)
This paper studies the proton radiation influence on SOI FinFET analog parameters based on the device inversion coefficient (IC). The analysis focuses on some figures of merit in analog design like the transistor efficiency, ...
Impact of the Zn diffusion process at the source side of InXGa1-XAs nTFETs on the analog parameters down to 10 K
(Ieee, 2017-01-01)
In this work, the impact of the Zn diffusion processes in the source and the amount of Indium for InxGa1-xAs nTFET was analyzed, focusing on the basic analog parameters. Three different splits were analyzed: In0.53Ga0.47As ...
Impact of the Zn diffusion process at the source side of InxGa1-xAs nTFETs on the analog parameters down to 10 K
(2018-03-07)
In this work, the impact of the Zn diffusion processes in the source and the amount of Indium for InxGa1-xAs nTFET was analyzed, focusing on the basic analog parameters. Three different splits were analyzed: In0.53Ga0.47As ...
Analog parameters of solid source Zn diffusion in X Ga1-XAs nTFETs down to 10 K
(2016-10-28)
The analog parameters of In0.53Ga0.47As and In0.7Ga0.3As nTFETs with solid state Zn diffused source are investigated from room temperature down to 10 K. The In0.7Ga0.3As devices are shown to yield a higher on-state current ...