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Bismuth doping of hydrogenated amorphous germanium thin films
(Elsevier Science SaLausanneSuíça, 2006)
Bismuth doping of hydrogenated amorphous germanium thin films
(Elsevier Science Sa, 2006-12)
The optoelectronic properties of Bi-doped hydrogenated amorphous germanium (a-Ge:H), with relative impurity concentrations [Nimp/NGe] ranging between 8 × 10− 6 and 5.5 × 10− 3, are reported. The incorporation of Bi produces ...
Hardness and elastic modulus of carbon-germanium alloys
(Elsevier B.V., 2001-11-01)
This work reports on the mechanical properties of germanium-rich amorphous carbon-germanium alloys prepared by RF sputtering of a germanium/graphite target under an argon/hydrogen atmosphere. Nano-hardness, elastic modulus ...
Hardness and elastic modulus of carbon-germanium alloys
(Elsevier B.V., 2001-11-01)
This work reports on the mechanical properties of germanium-rich amorphous carbon-germanium alloys prepared by RF sputtering of a germanium/graphite target under an argon/hydrogen atmosphere. Nano-hardness, elastic modulus ...
Optoelectronic and structural properties of a-Ge1-xCx : H prepared by rf reactive cosputtering
(Amer Inst PhysicsWoodburyEUA, 1998)
Aluminium-induced nanocrystalline Ge formation at low temperatures
(Iop Publishing LtdBristolInglaterra, 2007)
Hardness and elastic modulus of carbon-germanium alloys
(Elsevier B.V., 2014)
Hydrogen bonding and void microstructure of a-Ge:H films
(Amer Inst PhysicsWoodbury, 1996)