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Hf-based high-k dielectrics for p-Ge MOS gate stacks
(American Institute of Physics, 2013-12)
The physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx). Electrical measurements combined with ...
Double path-integral migration velocity analysis: a real data example
(Iop Publishing LtdBristolInglaterra, 2011)
Vertical stacks of InAs quantum wires in an InP matrix
(Elsevier Science BvAmsterdamHolanda, 2003)
Analysis of the structural determinants for RNA binding of the human protein AUF1/hnRNP D
(Walter De Gruyter & CoBerlinAlemanha, 2002)
Carrier dynamics in stacked InP/GaAs quantum dots
(Amer Inst PhysicsMelvilleEUA, 2007)
Shear-aligned block copolymer monolayers as seeds to control the orientational order in cylinder-forming block copolymer thin films
(American Chemical Society, 2016-10-11)
We study the dynamics of coarsening of a cylinder-forming block copolymer thin film deposited on a prepatterned substrate made of a well-ordered block copolymer monolayer. During thermal annealing the shear-aligned bottom ...
Propriedades ópticas de pontos quânticos semicondutores de InAs/GaAs
(Universidade Tecnológica Federal do ParanáApucarana, 2011-11-24)
Semiconductors quantum dots(QDs)have attracted considerable interest from both
fundamental and technological point of view and have been extensively studied in aspects involving its structural properties and the electronic ...