Artículos de revistas
Hf-based high-k dielectrics for p-Ge MOS gate stacks
Fecha
2013-12Registro en:
Fadida, Sivan; Palumbo, Félix Roberto Mario; Nyns, Laura; Lin, Dennis; Van Elshocht, Sven; et al.; Hf-based high-k dielectrics for p-Ge MOS gate stacks; American Institute of Physics; Journal Of Vacuum Science & Technology B; 32; 12-2013; 1-7
0734-211X
CONICET Digital
CONICET
Autor
Fadida, Sivan
Palumbo, Félix Roberto Mario
Nyns, Laura
Lin, Dennis
Van Elshocht, Sven
Caymax, Matty
Eizenberg, Moshe
Resumen
The physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx). Electrical measurements combined with x-ray photoelectron spectroscopy chemical bonding analysis and band alignment determination were conducted in order to assess the suitability of hafnium-based high-k for this kind of gate stacks, with emphasis on low density of interface states and border traps. HfAlOx was found to be the most promising high-k from those studied. The authors have also found that the current- voltage trends for the various systems studied can be explained by the band alignment of the samples obtained by our x-ray photoelectron spectroscopy analysis.