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Raman phonon modes of zinc blende InxGa1-xN alloy epitaxial layers
(Amer Inst PhysicsWoodburyEUA, 1999)
Projeto e construção de um sistema de crescimento epitaxial por feixe molecularProject and construction of a molecular beam epitaxy growth system
(Universidade Federal de ViçosaBRFísica Teórica e Computacional; Preparação e Caracterização de Materiais; Sensores e Dispositivos.Mestrado em Física AplicadaUFV, 2015)
Overgrowth of wrinkled InGaAs membranes using molecular beam epitaxy
(Journal of Crystal Growth, 2018)
Influence of rough substrates on the morphology evolution of epitaxial films
(Amer Physical SocCollege PkEUA, 2000)
Self-assembled islands on strained systems: Control of formation, evolution, and spatial distribution
(American Physical SocCollege PkEUA, 1998)
On the onset of InAs islanding on InP: influence of surface steps
(Elsevier Science BvAmsterdamHolanda, 1997)
REAL-TIME OPTICAL DIAGNOSTICS FOR MEASURING AND CONTROLLING EPITAXIAL-GROWTH
(Elsevier Science SaLausanneSuíça, 1993)
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
(Amer Chemical Soc, 2017-09-01)
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on,graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene ...
AS CAPTURE AND THE GROWTH OF ULTRATHIN INAS LAYERS ON INP
(Amer Inst PhysicsWoodbury, 1994)