Artículos de revistas
AS CAPTURE AND THE GROWTH OF ULTRATHIN INAS LAYERS ON INP
Registro en:
Applied Physics Letters. Amer Inst Physics, v. 64, n. 24, n. 3279, n. 3281, 1994.
0003-6951
WOS:A1994NQ97900026
10.1063/1.111309
Autor
ASPNES, DE
TAMARGO, MC
BRASIL, MJSP
Institución
Resumen
Capture of As by (001) InP surfaces exposed to As fluxes under chemical beam epitaxy conditions is investigated by virtual-interface analysis of real-time kinetic ellipsometric data. Intentional growth of ultrathin InAs layers is readily followed. Arsenic accumulated in the absence of growth can be completely removed by exposure to P, showing that As-P exchange occurs only in the outermost layer. 64 24 3279 3281