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Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation
(2007)
This work presents the analog performance of nMOS triple-gate FinFETs with high-κ dielectrics, TiN gate material and undoped body from DC measurements. Different fin widths and devices with and without halo implantation ...
Evaluation of triple-gate FinFETs with SiO2-HfO2-TiN gate stack under analog operation
(2007)
This work presents the analog performance of nMOS triple-gate FinFETs with high-κ dielectrics, TiN gate material and undoped body from DC measurements. Different fin widths and devices with and without halo implantation ...
Experimental comparison between relaxed and strained Ge pFinFETs
(2017-06-29)
The experimental comparison between relaxed and strained Ge pFinFETs operating at room temperature is discussed. Although, the strain into the channel improves the drain current for wide transistors due to the boost of ...
Experimental comparison between relaxed and strained Ge pFinFETs
(Ieee, 2017-01-01)
The experimental comparison between relaxed and strained Ge pFinFETs operating at room temperature is discussed. Although, the strain into the channel improves the drain current for wide transistors due to the boost of ...
Ultrahigh-Gain Organic Electrochemical Transistor Chemosensors Based on Self-Curled Nanomembranes
(2021-01-01)
Organic electrochemical transistors (OECTs) are technologically relevant devices presenting high susceptibility to physical stimulus, chemical functionalization, and shape changes—jointly to versatility and low production ...
Analysis of proton irradiated n- and p-type strained FinFETs at low temperatures down to 100 K
(2018-04-25)
This paper studies the main low temperature electrical parameters of SOI n- and p-type FinFETs, standard and strained devices, submitted to proton irradiation. The study covers the range from room temperature down to 100 ...
Analog performance of standard and strained triple-gate silicon-on-insulator nFinFETs
(2008)
This work shows a comparison between the analog performance of standard and strained Si n-type triple-gate FinFETs with high-κ dielectrics and TiN gate material. Different channel lengths and fin widths are studied. It is ...
Improved operation of graded-channel SOI nMOSFETs down to liquid helium temperature
(2016)
© 2016 IOP Publishing Ltd.This paper presents the operation of Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs at low temperatures down to liquid helium temperature in comparison to standard uniformly doped ...
Junctionless multiple-gate transistors for analog applications
(2011)
This paper presents the evaluation of the analog properties of nMOS junctionless (JL) multigate transistors, comparing their performance with those exhibited by inversion-mode (IM) trigate devices of similar dimensions. ...