Buscar
Mostrando ítems 41-50 de 919
Resistivity humidity sensors based on hydrogenated amorphous carbon films
(IOP Publishing, 2019-02)
We have studied the humidity dependence of the electrical properties in hydrogenated amorphous carbon (a-C:H) films. The films were prepared in two stages combining the techniques of physical deposition in vapor phase ...
Hard graphitic-like amorphous carbon films with high stress and local microscopic density
(Amer Inst PhysicsMelvilleEUA, 2001)
Thin amorphous platinum films photochemically obtained, and their potential use as modified electrodes
(ELSEVIER SCIENCE SA, 2002)
Thin amorphous nanostructured Pt films have been photochemically obtained by means of direct UV radiation (254 nm) of an amorphous Pt[CH3(CH2)(8)COCHCOC4H9](3)K film deposited on Si(100) and on ITO glass through the ...
Observation of the Berreman effect in infrared reflection-absorption spectra of amorphous titanium oxide thin films deposited on aluminum
(Soc Applied SpectroscopyFrederickEUA, 2000)
Ferroelectric materials with photoluminescent properties
(Taylor & Francis Ltd, 2014)
Influence of hydrogen on the thermomechanical properties of a-CNx : H and a-CNx films deposited by glow discharge and ion beam assisted deposition
(Elsevier Science BvAmsterdamHolanda, 2006)
The influence of crystallization route on the properties of lanthanum-doped Bi4Ti3O12 thin films prepared from polymeric precursors
(Elsevier B.V., 2004-11-15)
Pure and lanthanum-doped Bi4Ti3O12 thin films were deposited on Pt/Ti/SiO2/Si substrate using a polymeric precursor solution. The spin-coated films were specular and crack-free and crystalline after annealing at 700 degreesC ...
The influence of crystallization route on the properties of lanthanum-doped Bi4Ti3O12 thin films prepared from polymeric precursors
(Elsevier B.V., 2004-11-15)
Pure and lanthanum-doped Bi4Ti3O12 thin films were deposited on Pt/Ti/SiO2/Si substrate using a polymeric precursor solution. The spin-coated films were specular and crack-free and crystalline after annealing at 700 degreesC ...
Optoelectronic and structural properties of a-Ge1-xCx : H prepared by rf reactive cosputtering
(Amer Inst PhysicsWoodburyEUA, 1998)