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Assimetria do Ibovespa: um estudo comparativo entre modelos heterocedásticos
(Universidade Federal de Santa MariaBrasilUFSMCentro de Ciências Naturais e Exatas, 2023-04-06)
The present study proposes a comparative analysis of six volatility models for the
theoretical portfolio returns of the Ibovespa, considering the presence of heavy
tails, non-linearity, asymmetry, long memory, and ...
Analisador de Non-Volatile Memory Express baseado em Field-Programmable Gate Array
(Universidade do Vale do Rio dos Sinos, 2020-08-13)
The usage and development intensification of Solid-State Drive (SSD), in varying applications, open up the optimization possibilities for the legacy techniques acquired from the outdated Hard Disk Drives (HDD). For this ...
Analisador de Non-Volatile Memory Express baseado em Field-Programmable Gate Array
(Universidade do Vale do Rio dos Sinos, 2020-08-13)
The usage and development intensification of Solid-State Drive (SSD), in varying applications, open up the optimization possibilities for the legacy techniques acquired from the outdated Hard Disk Drives (HDD). For this ...
Utilização de sistema operacional armazenado em memória sólida portátil não-volátil
(Universidade Tecnológica Federal do ParanáCuritibaBrasilEspecialização em Gestão de Tecnologia da Informação e ComunicaçãoUTFPR, 2015-02-23)
With the paradigm: In the world of connectivity and communication, increasingly technologically shared, could we imagine: a non-volatile solid portable memory, such as USB flash drive without an operating system ready to ...
YBCO-based non-volatile ReRAM tested in Low Earth Orbit
(Springer, 2020-08)
An YBCO-based test structure corresponding to the family of ReRAM devices associated with the valence change mechanism is presented. We have characterized its electrical response previous to its lift-off to a Low Earth ...
Current-voltage curves of eutectic In-Sb-Te thin films for phase change memory devices
(Emerald, 2019-10)
Purpose: The purpose of this paper is to investigate electrical properties of eutectic In8Sb8Te84 and In10Sb51Te39 as made thin films to evaluate their potential for non-volatile phase-change memories, once the thermal ...