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Mostrando ítems 21-30 de 230
STRAIN DETERMINATION IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES BY PHOTOMODULATED REFLECTANCE
(Amer Inst PhysicsWoodbury, 1993)
Polariton Resonances for Ultrastrong Coupling Cavity Optomechanics in GaAs/AlAs Multiple Quantum Wells
(American Physical Society, 2015-12)
Polariton-mediated light-sound interaction is investigated through resonant Brillouin scattering experiments in GaAs/AlAs multiple-quantum wells. Photoelastic coupling enhancement at exciton-polariton resonance reaches 105 ...
Tight-binding study of the hole subband structure properties of p-type delta-doped quantum wells in Si by using a Thomas-Fermi-Dirac potential
(IOP PUBLISHING, 2009)
We present the hole subband structure of p-type delta-doped single, double, multiple and superlattice quantum wells in Si. We use the first neighbors sp3s ∗ tight-binding approximation including spin for the hole level ...
Modelagem computacional de estruturas de poços quânticos semicondutores para dispositivos optoeletrônicos e spintrônicos
(Universidade Federal de São CarlosBRUFSCarPrograma de Pós-Graduação em Física - PPGF, 2014-01-29)
In the present thesis, we realize a computational modeling of semiconductor structures based on multiple quantum wells with filter barriers and on quantum wells with semiconductor diluted magnetic layers. We numerically ...
Efeito do tratamento térmico nas propriedades ópticas de pontos quânticos emitindo na faixa espectral de 1,3 a 1,5 üm
(Universidade Estadual Paulista (Unesp), 2008-02-29)
Neste trabalho investigamos pontos quânticos de InAs sobre um substrato de GaAs crescidos pela técnica de epitaxia por feixe molecular (MBE, Molecular Beam Epitaxy). Esses pontos quânticos emitem radiação no intervalo de ...
Efeito do tratamento térmico nas propriedades ópticas de pontos quânticos emitindo na faixa espectral de 1,3 a 1,5 üm
(Universidade Estadual Paulista (Unesp), 2008-02-29)
Neste trabalho investigamos pontos quânticos de InAs sobre um substrato de GaAs crescidos pela técnica de epitaxia por feixe molecular (MBE, Molecular Beam Epitaxy). Esses pontos quânticos emitem radiação no intervalo de ...
PHOTOINDUCED INTERSUBBAND TRANSITION IN UNDOPED HGCDTE MULTIPLE-QUANTUM WELLS
(Amer Inst PhysicsWoodbury, 1995)
EMISSION OF GAAS/ALXGA1-XAS ASYMMETRIC MODULATION-DOPED MULTIPLE QUANTUM WELLS UNDER DIFFERENT EXCITATION CONDITIONS BY KR+ AND AR+ LASERS
(Academic Press LtdLondonInglaterra, 1989)
Magneto-optical probe of quantum Hall states in a wide parabolic well modulated by random potential
(AMER PHYSICAL SOCCOLLEGE PK, 2012)
Polarized photoluminescence from weakly coupled random multiple well quasi-three-dimensional electron system is studied in the regime of the integer quantum Hall effect. Two quantum Hall ferromagnetic ground states assigned ...
Multiple-photon peak generation near the similar to 10 mu m range in quantum dot infrared photodetectors
(Amer Inst PhysicsMelvilleEUA, 2011)