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Rod length influence in torque measurement of SPT-T test
(2007-09-18)
Since Ranzini suggested supplementing the SPT test with measurement of the torque required to turn the split spoon sampler after driving, many Brazilian engineers have been using this in the design of pile foundations. ...
Consumo, actitudes hacia el endeudamiento, materialismo e influencia de pares en adolescentes rurales del sur de ChileConsumption, attitudes to the debt, materialism, and peer influence in rural teenagers from southern Chile
(Centro Interamericano de Investigaciones Psicológicas y Ciencias Afines (CIIPCA), 2019)
Brittleness index and its relationship with materials mechanical properties: Influence on the machinability of CAD/CAM materials
(2019-01-01)
The aim of this study is to evaluate the machinability of four CAD/CAM materials (n = 13) assessed by brittleness index, Vickers hardness, and fracture toughness and interaction among such mechanical properties. The materials ...
Limiting the influence of friction on the split Hopkinson pressure bar tests by using a ring specimen
(PERGAMON-ELSEVIER SCIENCE LTDOXFORD, 2012)
The deformation of a ring under axial compression is analyzed in order to estimate a favorable ring specimen geometry capable of limiting the influence of friction on the stress-strain curve obtained from SHPB tests. The ...
Optimal design of periodic functionally graded composites with prescribed properties
(SPRINGER, 2009)
The computational design of a composite where the properties of its constituents change gradually within a unit cell can be successfully achieved by means of a material design method that combines topology optimization ...
Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
(2016-11-02)
In this paper the influence of spacer material (S13N4, S1O2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical ...
Influence of spacer materials on underlapped and self-aligned UTBB SOI nMOSFET
(Ieee, 2016-01-01)
In this paper the influence of spacer material (Si3N4 SiO2 or vacuum) on Ultra Thin Body and Buried Oxide (UTBB) SOI nMOSFET for underlapped and self-aligned drain engineering devices are studied by bi-dimensional numerical ...