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The use of current transformers for noise detection due to sparking in insulators strings in high voltage transmission lines
(2010-12-31)
In a general way, in an electric power utility the current transformers (CT) are used to measurement and protection of transmission lines (TL) 1 The Power Line Carriers systems (PLC) are used for communication between ...
The use of current transformers for noise detection due to sparking in insulators strings in high voltage transmission lines
(2010-12-31)
In a general way, in an electric power utility the current transformers (CT) are used to measurement and protection of transmission lines (TL) 1 The Power Line Carriers systems (PLC) are used for communication between ...
Análise do comportamento dinâmico de descargas parciais e da produção de ondas sonoras a partir de simulação numérica
(Universidade Tecnológica Federal do ParanáCuritibaBrasilPrograma de Pós-Graduação em Engenharia Elétrica e Informática IndustrialUTFPR, 2022-08-09)
Partial discharges can occur in different types of electric equipment and cause progressive insulation deterioration, só there is interest in monitoring partial discharges for assessing the state of the isolation of an ...
Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM
(IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCPISCATAWAY, 2012)
One-transistor floating-body random access memory retention time distribution is investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention time can be improved by two to three orders of ...
Application of UTBB (SOI)-S-BE Tunnel-FET as a Dual-Technology Transistor
(Ieee, 2019-01-01)
In this work we propose for the first time the use of the recently introduced UTBB (SOI)-S-BE TFET (Ultra-Thin Body and Box Back Enhanced Silicon-On-Insulator Tunnel-FET) operating as a MOSFET device only by changing its ...
Application of UTBBBE SOI tunnel-FET as a dual-technology transistor
(2019-08-01)
In this work we propose for the first time the use of the recently introduced UTBBBE SOI TFET (Ultra-Thin Body and Box Back Enhanced Silicon-On-Insulator Tunnel-FET) operating as a MOSFET device only by changing its bias ...
Study of the utbbbe soi tunnel-fet working as a dual-technology transistor
(2021-08-23)
— In this work we further investigate the operation of theBESOI (Back-Enhanced Silicon-On Insulator) Dual-Technology FET, analyzing not only its behavior as a p-type Tunnel-FET when a negative back bias is applied to the ...
DISEÑO DE SOPORTES AISLANTES EN TRANSFORMADORES SECOS EN MEDIA TENSIÓN
(2011-10-24)
Improvements on solid insulating materials over the last decades have allowed a fast progress in the medium voltage dry transformer technology compared to liquid-filled transformers. The design of air distances on dry type ...
Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method
(2013-09-01)
LaNiO3 thin films were deposited on SrLaAlO4 (1 0 0) and SrLaAlO4 (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700° C in tube oven. Structural, ...