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Low interface states and high dielectric constant Y2O3 films on Si substrates
(American Vacuum Society, 2013-01-16)
Low interface states and high dielectric constant Y2O3 films on Si substrates
(American Vacuum Society, 2013-01-16)
Potentialities and practical limitations of absolute neutron dosimetry using thin films of uranium and thorium applied to the fission track dating
(Elsevier B.V., 1999-06-01)
Neutron dosimetry using natural uranium and thorium thin films makes possible that mineral dating by the fission-track method can be accomplished, even when poor thermalized neutron facilities are employed. In this case, ...
PHOTOCHEMICAL DEPOSITION OF Pd-LOADED AND Pt-LOADED TIN OXIDE THIN FILMS
(Sociedad Chilena de Química, 2006)
Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature
(Elsevier Science Sa, 2015-08)
The present study investigates the main electrical transport mechanism in V2O5 thin films deposited by RF magnetron sputtering on the basis of the Mott's small polaron hopping model. The material under test was obtained ...
Structural, dielectric and ferroelectric properties of Nb-doped PZT thin films produced by oxide precursor method
(2002-01-01)
Recently, was proposed a chemical method for preparation of ferroelectric thin films based on oxide precursors. In this work, PZT thin films were prepared to attest the viability of this method for cation-substitution. In ...
Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method
(Elsevier B.V. Sa, 2011-10-13)
CaCu3Ti4O12 (stoichiometric) and Ca1.1Cu2.9Ti4O12 (non-stoichiometric) thin films have been prepared by the soft chemical method on Pt/Ti/SiO2/Si substrates, and their electrical and dielectric properties have been compared ...