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(100) oriented diamond film prepared on amorphous carbon buffer layer containing nano-crystalline diamond grains
(Elsevier, 2020)
In this study, amorphous carbon buffer layer containing nano-crystalline diamond grains was pre-deposited on single crystal silicon (Si) wafers. (100) oriented diamond films were prepared on the buffer layer by increasing ...
Diamond thermal expansion measurement using transmitted X-ray back-diffraction
(Wiley-blackwellHobokenEUA, 2005)
Stress Analysis on Single-Crystal Diamonds by Raman Spectroscopy 3D Mapping
(Scientific Research, 2013-03)
Results on stress analysis for single-crystal diamonds are presented. Isolated crystals were studied by Raman mapping and depth profiling techniques, using confocal microscopy. Diamonds were deposited on molybdenum and ...
Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon
(PROFESSIONAL ENGINEERING PUBLISHING LTD, 2008)
Single-point diamond turning of monocrystalline semiconductors is an important field of research within brittle materials machining. Monocrystalline silicon samples with a (100) orientation have been diamond turned under ...
Silicon-vacancy color centers in diamond microcrystals from ethanol and tetramethoxysilane
(Springer, 2019-07-01)
Silicon-vacancy color centers in diamond microcrystals were produced by means of a novel proceeding: chemical vapor deposition using a solution of tetramethoxysilane in ethanol as precursor. The use of these precursors ...
Confinement effects in irradiation of nanocrystalline diamond
(Pergamon-Elsevier Science Ltd, 2015-08)
Swift heavy ion irradiation does not generate amorphous tracks in diamond, contrary to what happens in graphite or in diamond-like carbon. Since nanocrystalline diamond is of interest for several technological applications ...
Hillock formation on nanocrystalline diamond
(Elsevier, 2017-04)
Hillock formation on nanocrystalline (nc) diamond under swift heavy ion irradiation is studied by means of classical molecular dynamics. The irradiation is simulated by means of a thermal spike model, the nc samples include ...
Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon
(SAGE PUBLICATIONS LTDLONDON, 2012)
The objective of this paper is to show the dependence relationship between the crystallographic orientations upon brittle-to-ductile transition during diamond turning of monocrystalline silicon. Cutting tests were performed ...
Surface amorphization in diamond turning of silicon crystal investigated by transmission electron microscopy
(2000-08-01)
Silicon crystal exhibits a ductile regime during machining prior to the onset of fracture when appropriate cutting conditions are applied. The present study shows that the ductile regime is a result of a phase transformation ...