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Propiedades ópticas- estructurales y morfológicas de aleaciones ternarias de Ga1-xAsMnx crecidas por Magnetrón Sputtering
(2010)
En este trabajo de tesis, se estudió el crecimiento por la técnica de R.F Magnetrón Sputtering de materiales semiconductores Ga1-xMnxAs, conocidos como semiconductores semimagnéticos o semiconductores magnéticos diluidos ...
Effects of hydrostatic pressure and applied electric fields on the exciton states in GaAs-(Ga,Al)As quantum wells
(Elsevier Science BvAmsterdamHolanda, 2005)
Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure
(American Institute of Physics - AIPCollege Park, 2014)
Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. ...
Photoluminescence of radial heterostructured GaAs/AlGaAs/GaAs nanowires
(American Institute of Physics - AIPCollege Park, 2013-02)
Photoluminescence (PL) of high-density GaAs nanowires (NWs) encapsulated by a double AlGaAs/GaAs shell is studied. Two lines are found and assigned to the radiative recombinations of photoexcited electrons confined in the ...
Crystal structure and optical characterization of heterostructured GaAs/AlGaAs/GaAs nanowires
(American Institute of Physics - AIPCollege Park, 2013-04)
Structural and optical properties of heterostructured GaAs/AlGaAs/GaAs core/inner shell/outer shell nanowires are studied. Transmission electron microscopy and Raman scattering measurements unambiguously identify the ...
Electric force microscopy techniques on GaAs mesoscopic structures
(Universidade Estadual Paulista (Unesp), 2018-03-29)
As técnicas de microscopia de sonda Kelvin (KPFM) e de microscopia de força eletrostática (EFM) são amplamente utilizadas para analisar a distribuição do potencial de superfície, porém com pouca aplicação em nanoestruturas ...
Dynamics of photoexcited carriers in the presence of disorder in radial heterostructured GaAs/AlGaAs/GaAs nanowires
(American Institute of Physics - AIPCollege Park, 2013-07)
Time-resolved photoluminescence was employed to study electron-hole dynamics in radial heterostructured GaAs/AlGaAs/GaAs core/inner shell/outer shell nanowires. It was found that impurity random potential results in a red ...
Electrical performance of conducting polymer (SPAN) grown on GaAs with different substrate orientations
(Applied Surface Science, 2018)
Caracterización óptica por fotorreflectancia a temperatura variable de heteroestructuras semiconductoras ZnSe/GaAs y CdTe/GaAs
(2005)
En este trabajo se reporta el estudio de esfuerzos presentes en heteroestructura II-VI/GaAs como son el ZnSe/GaAs y el CdTe/GaAs, realizados mediante la técnica de Fotorreflectancia (FR) en un rango de temperaturas 12≤T≤300 ...
CARACTERIZACIÓN DE PELÍCULAS DELGADAS DE AlGaAs OBTENIDAS POR MAGNETRON SPUTTERING RF
(Universidad Nacional de Colombia - Sede Bogotá - Facultad de Ciencias - Departamento de Física, 2018-07-01)
Las películas de AlGaAs fueron depositadas por pulverización catódica asistida por campo magnético sobre sustratos de vidrio y Si (100). Se mantuvo constante la temperatura del substrato y se varió la relación de la potencia ...