Actas de congresos
A Monolithic 0.35-μm Sige Class E Power Amplifier Designed At 1.9 Ghz
Sbmo/ieee Mtt-s International Microwave And Optoelectronics Conference Proceedings. , v. , n. , p. - , 2013.
Dos Santos A.J.S.
Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)This paper presents the design of a monolithic 1.9 GHz, Class E, power amplifier (PA) for wireless application with the main components on chip. A cascode topology is used to attenuate transistor stress and to increase the output power, although it compromises the efficiency due to the dissipative process caused by transistor parasitic capacitances. The proposed PA was developed in a single-ended topology because most of the existing components designed use this configuration. The PA was developed in a 0.35-μm SiGe BiCMOS technology with 3.3 Volts which delivers 20.9 dBm output power and 25.5% of power added efficiency (PAE). It also presents a bandwidth of 60 MHz which is suitable for GSM application. Some considerations about the layout are also discussed. © 2013 IEEE.Microwave Theory and Techniques Society (IEEE MTT-S),Sociedade Brasileira de Micro-Ondas e Optoeletrenica (SBMO),CNPq,CAPES,FAPERJConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Lie, D.Y.C., RF-soc: Integration trends of on-chip cmos power amplifier: Benefits of external pa versus integrated pa for portable wireless communications (2010) International Journal of Microwave Science and Technology, p. 380108. , article IDHella, M.M., Ismail, M., (2002) RF CMOS Power Amplifiers, , Kluwer Academic Publishers, N.YLarson, L.E., Silicon technology tradeoffs for radio frequency/mixed-signal system-on-a-chip (2003) IEEE Transactions on Electron Devices, 50 (3), pp. 683-699Sowlati, T., Salama, A., Sitch, J., Low voltage, high efficiency GaAs class e power amplifier for wireless transmitters (1995) IEEE J.Solid-State Circuits, 30, pp. 1074-1080. , OctSokal, N.O., Sokal, A., Class E-A new class of high-efficiency, tuned single-ended switching power amplifiers (1975) IEEE J.Solid-State Circuits, SC10, pp. 168-176. , June, 168-176Raab, F.H., Idealized operation of the class e tuned power amplifier (1997) IEEE Transactions on Circuits and Systems, CAS-24 (12), pp. 725-735. , DecemberTsai, K.-C., Gray, P.R., A 1.9 GHz 1-W CMOS class-E power amplifier for wireless communications (1999) IEEE J.Solid-State Circuits, 31, pp. 962-970. , JulyYoo, C., Huang, Q., A Common-Gate Switched 0.9-W Class e PA with 41% PAE in 0.25-um CMOS (2001) Proceedings of the IEEE, 36, pp. 823-830. , MayKolding, T.E., (2000) Consistent Layout Techniques for Successful RF CMOS Design, , published by RISC Group DenmarkHo, K.W., Loung, H.C., A1-V CMOS power amplifier for bluetooth application (2003) IEEE Trans.on Circuits and System II, Analog and Digital Signal Processing, 50 (8), pp. 445-449. , AugustMazzanti, A., Larcherr.Brama, L., Svelto, F., A1.4-2ghz wideband cmos class e power amplifier delivering 23 dbm peak with 67% pae (2005) IEEE Digests of Papers, Radio Frequency Integrated Circuits (RFIC) Symposium, pp. 425-428. , 14/JuneMurad, S.A.Z., Pokharel, R.K., Kanaya, H., Ioshida, K., A 2.4 GHz 0.18-m CMOS Claee e Single-ended Power Amplifier Without Spiral Inductors, , 2010 IEEE