| dc.creator | Dos Santos A.J.S. | |
| dc.creator | Martins E. | |
| dc.date | 2013 | |
| dc.date | 2015-06-25T19:13:38Z | |
| dc.date | 2015-11-26T15:11:15Z | |
| dc.date | 2015-06-25T19:13:38Z | |
| dc.date | 2015-11-26T15:11:15Z | |
| dc.date.accessioned | 2018-03-28T22:21:21Z | |
| dc.date.available | 2018-03-28T22:21:21Z | |
| dc.identifier | 9781479913978 | |
| dc.identifier | Sbmo/ieee Mtt-s International Microwave And Optoelectronics Conference Proceedings. , v. , n. , p. - , 2013. | |
| dc.identifier | | |
| dc.identifier | 10.1109/IMOC.2013.6646488 | |
| dc.identifier | http://www.scopus.com/inward/record.url?eid=2-s2.0-84887452226&partnerID=40&md5=74de793efb9f4681ad7b8ea7a58d4fd0 | |
| dc.identifier | http://www.repositorio.unicamp.br/handle/REPOSIP/88910 | |
| dc.identifier | http://repositorio.unicamp.br/jspui/handle/REPOSIP/88910 | |
| dc.identifier | 2-s2.0-84887452226 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/1258090 | |
| dc.description | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
| dc.description | This paper presents the design of a monolithic 1.9 GHz, Class E, power amplifier (PA) for wireless application with the main components on chip. A cascode topology is used to attenuate transistor stress and to increase the output power, although it compromises the efficiency due to the dissipative process caused by transistor parasitic capacitances. The proposed PA was developed in a single-ended topology because most of the existing components designed use this configuration. The PA was developed in a 0.35-μm SiGe BiCMOS technology with 3.3 Volts which delivers 20.9 dBm output power and 25.5% of power added efficiency (PAE). It also presents a bandwidth of 60 MHz which is suitable for GSM application. Some considerations about the layout are also discussed. © 2013 IEEE. | |
| dc.description | | |
| dc.description | | |
| dc.description | | |
| dc.description | | |
| dc.description | Microwave Theory and Techniques Society (IEEE MTT-S),Sociedade Brasileira de Micro-Ondas e Optoeletrenica (SBMO),CNPq,CAPES,FAPERJ | |
| dc.description | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
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| dc.description | Mazzanti, A., Larcherr.Brama, L., Svelto, F., A1.4-2ghz wideband cmos class e power amplifier delivering 23 dbm peak with 67% pae (2005) IEEE Digests of Papers, Radio Frequency Integrated Circuits (RFIC) Symposium, pp. 425-428. , 14/June | |
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| dc.language | en | |
| dc.publisher | | |
| dc.relation | SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings | |
| dc.rights | fechado | |
| dc.source | Scopus | |
| dc.title | A Monolithic 0.35-μm Sige Class E Power Amplifier Designed At 1.9 Ghz | |
| dc.type | Actas de congresos | |
