Actas de congresos
Optimization Study Of Thermal Stability Of W/gaas Schottky Gates
Registro en:
1558991964
Materials Research Society Symposium Proceedings. Publ By Materials Research Society, Pittsburgh, Pa, United States, v. 300, n. , p. 273 - 277, 1993.
2729172
2-s2.0-0027801565
Autor
Favoretto Marcio
Swart Jacobus W.
Institución
Resumen
This paper presents an experimental study of the physical and electrical characteristics of tungsten (W) thin films versus the deposition parameters of sputtering. A correlation between the W film characteristics and thermal stability of the W/GaAs Schottky diodes is also presented. Good thermal stability was obtained for W gates with low resistivity and α-W phase, deposited at low pressure and low RF power. W films deposited at high pressure presented high resistivity, β-W phase and weak thermal stability. Diodes annealed under As over-pressure ambient presented an enhanced thermal stability of about 100 °C. 300
273 277