Actas de congresos
Optimization Study Of Thermal Stability Of W/gaas Schottky Gates
Materials Research Society Symposium Proceedings. Publ By Materials Research Society, Pittsburgh, Pa, United States, v. 300, n. , p. 273 - 277, 1993.
Swart Jacobus W.
This paper presents an experimental study of the physical and electrical characteristics of tungsten (W) thin films versus the deposition parameters of sputtering. A correlation between the W film characteristics and thermal stability of the W/GaAs Schottky diodes is also presented. Good thermal stability was obtained for W gates with low resistivity and α-W phase, deposited at low pressure and low RF power. W films deposited at high pressure presented high resistivity, β-W phase and weak thermal stability. Diodes annealed under As over-pressure ambient presented an enhanced thermal stability of about 100 °C.300273277