Optimization Study Of Thermal Stability Of W/gaas Schottky Gates

dc.creatorFavoretto Marcio
dc.creatorSwart Jacobus W.
dc.date1993
dc.date2015-06-30T14:32:28Z
dc.date2015-11-26T14:43:45Z
dc.date2015-06-30T14:32:28Z
dc.date2015-11-26T14:43:45Z
dc.date.accessioned2018-03-28T21:52:06Z
dc.date.available2018-03-28T21:52:06Z
dc.identifier1558991964
dc.identifierMaterials Research Society Symposium Proceedings. Publ By Materials Research Society, Pittsburgh, Pa, United States, v. 300, n. , p. 273 - 277, 1993.
dc.identifier2729172
dc.identifier
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-0027801565&partnerID=40&md5=6e7882b3de103005055999afcb479da0
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/99745
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/99745
dc.identifier2-s2.0-0027801565
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1251826
dc.descriptionThis paper presents an experimental study of the physical and electrical characteristics of tungsten (W) thin films versus the deposition parameters of sputtering. A correlation between the W film characteristics and thermal stability of the W/GaAs Schottky diodes is also presented. Good thermal stability was obtained for W gates with low resistivity and α-W phase, deposited at low pressure and low RF power. W films deposited at high pressure presented high resistivity, β-W phase and weak thermal stability. Diodes annealed under As over-pressure ambient presented an enhanced thermal stability of about 100 °C.
dc.description300
dc.description
dc.description273
dc.description277
dc.languageen
dc.publisherPubl by Materials Research Society, Pittsburgh, PA, United States
dc.relationMaterials Research Society Symposium Proceedings
dc.rightsfechado
dc.sourceScopus
dc.titleOptimization Study Of Thermal Stability Of W/gaas Schottky Gates
dc.typeActas de congresos


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