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Impurity states in the narrow band-gap semiconductor n-type InSb
(1996)
We investigate impurity pair and triad formations in the narrow band-gap semiconductor n-doped InSb. It is found that in the region of the band-gap energy, Eg = 0.23 eV, at 0 K, the effects of such clusters play a relevant ...
Below-bandgap excitation of bulk semiconductors by twisted light
(Europhysics Letters, 2010-07)
I theoretically investigate the excitation of bulk semiconductors by twisted light below the energy bandgap. To this end, I modify a well-known model of light-semiconductor interaction to account for the conservation of ...
Simulation and measurements of current-injected gain control in semiconductor optical amplifiers
(John Wiley & Sons IncHobokenEUA, 2004)
Guía de estudio : electrónica de estado sólido
(Servicio Nacional de Aprendizaje (SENA), 2014)
Diodos y semiconductores
(2022-05-30)
Los elementos activos son aquellos que modifican la corriente y voltaje del sistema. Para el uso de los elementos activos como lo son el diodo se requiere entender primero que es un semiconductor. Los semiconductores son ...
Trace impurities analysis determined by neutron activation in the PbIsub(2) crystal semiconductor
(Amsterdam: Elsevier, 2003, 2014)