Artigo de Periódico
Impurity states in the narrow band-gap semiconductor n-type InSb
Fecha
1996Registro en:
0038-1098
v. 99, n. 4
Autor
Silva, A. Ferreira da
Dantas, Nilton Souza
Mota, F. de Brito
Canuto, Sylvio
Fazzio, A.
Silva, A. Ferreira da
Dantas, Nilton Souza
Mota, F. de Brito
Canuto, Sylvio
Fazzio, A.
Institución
Resumen
We investigate impurity pair and triad formations in the narrow band-gap semiconductor n-doped InSb. It is found that in the region of the band-gap energy, Eg = 0.23 eV, at 0 K, the effects of such clusters play a relevant role in the optical properties around and below the ionization energy of an isolated impurity (i.e., Ei = 0.64 meV). The transition for the uncompensated system is obtained as the concentration of impurities exceeds Nc = 4.7 × 1013 cm−3.