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Impurity states in the narrow band-gap semiconductor n-type InSb
(1996)
We investigate impurity pair and triad formations in the narrow band-gap semiconductor n-doped InSb. It is found that in the region of the band-gap energy, Eg = 0.23 eV, at 0 K, the effects of such clusters play a relevant ...
Laser-dressed-band approach to shallow-impurity levels of semiconductor heterostructures
(Pergamon-elsevier Science LtdOxfordInglaterra, 1998)
Impurity cluster effects in high- and low-doping semiconductor materials
(2011)
The cluster-like impurity effect in semiconductor materials as Si, GaN, GaAs, and 4H[BOND]SiC for impurity concentrations spanning the metallic to the insulating regimes, i.e., from high- to low-doping concentration, has ...
Trace impurities analysis determined by neutron activation in the PbIsub(2) crystal semiconductor
(Amsterdam: Elsevier, 2003, 2014)
Influence of nonmagnetic impurity scattering on spin dynamics in diluted magnetic semiconductors
(American Physical Society, 2017-01)
The doping of semiconductors with magnetic impurities gives rise not only to a spin-spin interaction between quasifree carriers and magnetic impurities but also to a local spin-independent disorder potential for the carriers. ...
Light Absorption near Threshold with Phonon Participation for Impurities in Semiconductors
(Sociedade Brasileira de Física, 2002)
It is presented a simple model for the calculation of the transition rate for impurities in semiconductors in which electron-phonon interaction is taken into account in a second order time dependent perturbation theory. ...
Laser dressing effects in low-dimensional semiconductor systems
(Pergamon-elsevier Science LtdOxfordInglaterra, 2000)