| dc.contributor | Universidade Estadual Paulista (UNESP) | |
| dc.creator | Boratto, Miguel Henrique | |
| dc.creator | Scalvi, Luis Vicente de Andrade | |
| dc.creator | Machado, Diego Henrique O. | |
| dc.date | 2016-03-02T13:03:32Z | |
| dc.date | 2016-10-25T21:33:04Z | |
| dc.date | 2016-03-02T13:03:32Z | |
| dc.date | 2016-10-25T21:33:04Z | |
| dc.date | 2014 | |
| dc.date.accessioned | 2017-04-06T10:05:48Z | |
| dc.date.available | 2017-04-06T10:05:48Z | |
| dc.identifier | Advanced Materials Research, v. 975, p. 248-253, 2014. | |
| dc.identifier | 1662-8985 | |
| dc.identifier | http://hdl.handle.net/11449/135610 | |
| dc.identifier | http://acervodigital.unesp.br/handle/11449/135610 | |
| dc.identifier | 10.4028/www.scientific.net/AMR.975.248 | |
| dc.identifier | 7730719476451232 | |
| dc.identifier | http://dx.doi.org/10.4028/www.scientific.net/AMR.975.248 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/946116 | |
| dc.description | Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550°C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown. | |
| dc.language | eng | |
| dc.relation | Advanced Materials Research | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.subject | Alumina | |
| dc.subject | Oxidation | |
| dc.subject | Resistive evaporation | |
| dc.subject | Thermal annealing | |
| dc.title | Al2O3 Obtained through resistive evaporation for use as insulating layer in transparent field effect transistor | |
| dc.type | Otro | |
