Fabrication and structural characterization of bismuth niobate thin films grown by chemical solution deposition

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorGoncalves, L. F.
dc.creatorCortes, J. A.
dc.creatorRanieri, M. G. A.
dc.creatorDestro, F. B.
dc.creatorRamirez, M. A.
dc.creatorSimoes, A. Z.
dc.date2015-10-22T07:24:15Z
dc.date2016-10-25T21:16:40Z
dc.date2015-10-22T07:24:15Z
dc.date2016-10-25T21:16:40Z
dc.date2015-02-01
dc.date.accessioned2017-04-06T09:15:59Z
dc.date.available2017-04-06T09:15:59Z
dc.identifierJournal Of Materials Science-materials In Electronics. Dordrecht: Springer, v. 26, n. 2, p. 1142-1150, 2015.
dc.identifier0957-4522
dc.identifierhttp://hdl.handle.net/11449/129867
dc.identifierhttp://acervodigital.unesp.br/handle/11449/129867
dc.identifierhttp://dx.doi.org/10.1007/s10854-014-2518-6
dc.identifierWOS:000349439500072
dc.identifierhttp://link.springer.com/article/10.1007%2Fs10854-014-2518-6
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/940421
dc.descriptionBi3NbO7 (BNO) thin films were deposited on Pt/TiO2/SiO2/Si (100) substrates at room temperature from the polymeric precursor method. X-ray powder diffraction and transmission electron microscopy were used to investigate the formation characteristics and stability range of the tetragonal modification of a fluorite-type solid solution. The results showed that this tetragonal, commensurately modulated phase forms through the intermediate formation of the incommensurately modulated cubic fluorite phase followed by the incommensurate-commensurate transformation. The 200 nm thick BNO films exhibit crystalline structure, a dielectric constant of 170, capacitance density of 200 nF/cm(2), dielectric loss of 0.4 % at 1 MHz, and a leakage current density of approximately 1 x 10(-7) A/cm(2) at 5 V. They show breakdown strength of about 0.25 MV/cm. The leakage mechanism of BNO film in high field conduction is well explained by the Schottky and Poole-Frenkel emission models. The 200 nm thick BNO film is suitable for embedded decoupling capacitor applications directly on a printed circuit board.
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.languageeng
dc.publisherSpringer
dc.relationJournal Of Materials Science-materials In Electronics
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.titleFabrication and structural characterization of bismuth niobate thin films grown by chemical solution deposition
dc.typeOtro


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