dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorFagotto, EAM
dc.creatorRossi, S. M.
dc.creatorMoschim, E.
dc.date2015-03-18T15:55:03Z
dc.date2016-10-25T20:32:43Z
dc.date2015-03-18T15:55:03Z
dc.date2016-10-25T20:32:43Z
dc.date1998-11-01
dc.date.accessioned2017-04-06T07:12:48Z
dc.date.available2017-04-06T07:12:48Z
dc.identifierIeee Transactions On Electron Devices. New York: Ieee-inst Electrical Electronics Engineers Inc, v. 45, n. 11, p. 2361-2364, 1998.
dc.identifier0018-9383
dc.identifierhttp://hdl.handle.net/11449/117065
dc.identifierhttp://acervodigital.unesp.br/handle/11449/117065
dc.identifier10.1109/16.726657
dc.identifierWOS:000076754800015
dc.identifierhttp://dx.doi.org/10.1109/16.726657
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/927712
dc.descriptionIn this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among localized states (dot-like) and extended states (channel-like), from which a Fano resonance situation arises.
dc.languageeng
dc.publisherIeee-inst Electrical Electronics Engineers Inc
dc.relationIeee Transactions On Electron Devices
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectquantum dots
dc.subjectquantum effect semiconductor devices
dc.subjectquantum wires
dc.subjectresonant tunneling devices
dc.titleGeometry effects on the electronic properties of multi-open dots structures
dc.typeOtro


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