| dc.contributor | Universidade Estadual Paulista (UNESP) | |
| dc.creator | Fagotto, EAM | |
| dc.creator | Rossi, S. M. | |
| dc.creator | Moschim, E. | |
| dc.date | 2015-03-18T15:55:03Z | |
| dc.date | 2016-10-25T20:32:43Z | |
| dc.date | 2015-03-18T15:55:03Z | |
| dc.date | 2016-10-25T20:32:43Z | |
| dc.date | 1998-11-01 | |
| dc.date.accessioned | 2017-04-06T07:12:48Z | |
| dc.date.available | 2017-04-06T07:12:48Z | |
| dc.identifier | Ieee Transactions On Electron Devices. New York: Ieee-inst Electrical Electronics Engineers Inc, v. 45, n. 11, p. 2361-2364, 1998. | |
| dc.identifier | 0018-9383 | |
| dc.identifier | http://hdl.handle.net/11449/117065 | |
| dc.identifier | http://acervodigital.unesp.br/handle/11449/117065 | |
| dc.identifier | 10.1109/16.726657 | |
| dc.identifier | WOS:000076754800015 | |
| dc.identifier | http://dx.doi.org/10.1109/16.726657 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/927712 | |
| dc.description | In this paper we show that the electronic properties of multi-open dots structures are strongly modified by even smalt changes in their geometries. Our discussion of these effects is done in terms of the interaction among localized states (dot-like) and extended states (channel-like), from which a Fano resonance situation arises. | |
| dc.language | eng | |
| dc.publisher | Ieee-inst Electrical Electronics Engineers Inc | |
| dc.relation | Ieee Transactions On Electron Devices | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.subject | quantum dots | |
| dc.subject | quantum effect semiconductor devices | |
| dc.subject | quantum wires | |
| dc.subject | resonant tunneling devices | |
| dc.title | Geometry effects on the electronic properties of multi-open dots structures | |
| dc.type | Otro | |
