Structural, dielectric, ferroelectric and optical properties of PBCT, PBST and PCST complex thin films on LaNiO3 metallic conductive oxide layer coated Si substrates by the CSD technique

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorPontes, D. S. L.
dc.creatorChiquito, A. J.
dc.creatorPontes, F. M.
dc.creatorLongo, E.
dc.date2015-03-18T15:53:33Z
dc.date2016-10-25T20:25:09Z
dc.date2015-03-18T15:53:33Z
dc.date2016-10-25T20:25:09Z
dc.date2014-10-05
dc.date.accessioned2017-04-06T07:04:11Z
dc.date.available2017-04-06T07:04:11Z
dc.identifierJournal Of Alloys And Compounds. Lausanne: Elsevier Science Sa, v. 609, p. 33-39, 2014.
dc.identifier0925-8388
dc.identifierhttp://hdl.handle.net/11449/116586
dc.identifierhttp://acervodigital.unesp.br/handle/11449/116586
dc.identifier10.1016/j.jallcom.2014.04.132
dc.identifierWOS:000336606000006
dc.identifierhttp://dx.doi.org/10.1016/j.jallcom.2014.04.132
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/927233
dc.descriptionFerroelectric thin films and LaNiO3 (LNO) metallic conductive oxide thin films were prepared by a chemical solution deposition (CSD) method. PBCT60, PBST60 and PCST60 ferroelectric thin films were grown on different structures such as LNO/Si and single-crystalline quartz SiO2 (X-cut) substrates. The LNO layer acts as the bottom electrode for the electrical measurements. X-ray diffraction (XRD) analysis shows that LNO thin films on Si substrates and PBCT60, PBST60 and PCST60 thin films on LNO/Si structures are poly-crystalline with a moderate (110)-texture and a complete perovskite phase. LNO, PBCT60, PBST60 and PCST60 thin films have a continuous, dense and homogenous microstructure with a grain size on the order of 50-80 nm. Electrical resistivity-dependence temperature data confirm that LNO thin films display a good metallic character over a wide large range of temperatures. Optical characteristics of PBCT60, PBST60 and PCST60 thin films have also been investigated using ultraviolet-visible (UV-vis) spectroscopy in the wavelength range of 200-1100 nm. Ferroelectric thin films show a direct allowed optical transition with optical band gap values on the of order of 3.54, 3.66 and 3.89 eV for PBCT60, PCST60 and PBST60 thin films deposited on a SiO2 substrate, respectively. Good dielectric and ferroelectric properties are reported for ferroelectric thin films deposited on the LNO layer as bottom electrodes. Au/PBCT60/LNO/Si, Au/PBST60/LNO/Si and Au/PCST60/LNO/Si multilayer structures show a hysteresis loop with remnant polarization, P-r, of 9.6, 6.6 and 4.2 mu C/cm(2) at an applied voltage of 6 V for PBCT60, PBST60 and PCST60 thin films, respectively. (C) 2014 Elsevier B.V. All rights reserved.
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.languageeng
dc.publisherElsevier B.V.
dc.relationJournal Of Alloys And Compounds
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectThin films
dc.subjectLaNiO3
dc.subjectElectrical properties
dc.subjectChemical solution deposition
dc.titleStructural, dielectric, ferroelectric and optical properties of PBCT, PBST and PCST complex thin films on LaNiO3 metallic conductive oxide layer coated Si substrates by the CSD technique
dc.typeOtro


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