| dc.contributor | Universidade Estadual Paulista (UNESP) | |
| dc.creator | Simon, R. A. | |
| dc.creator | Kamimura, H. | |
| dc.creator | Berengue, O. M. | |
| dc.creator | Leite, E. R. | |
| dc.creator | Chiquito, A. J. | |
| dc.date | 2014-12-03T13:11:47Z | |
| dc.date | 2016-10-25T20:15:10Z | |
| dc.date | 2014-12-03T13:11:47Z | |
| dc.date | 2016-10-25T20:15:10Z | |
| dc.date | 2013-12-28 | |
| dc.date.accessioned | 2017-04-06T06:34:46Z | |
| dc.date.available | 2017-04-06T06:34:46Z | |
| dc.identifier | Journal Of Applied Physics. Melville: Amer Inst Physics, v. 114, n. 24, 6 p., 2013. | |
| dc.identifier | 0021-8979 | |
| dc.identifier | http://hdl.handle.net/11449/113564 | |
| dc.identifier | http://acervodigital.unesp.br/handle/11449/113564 | |
| dc.identifier | 10.1063/1.4857035 | |
| dc.identifier | WOS:000329173200032 | |
| dc.identifier | WOS000329173200032.pdf | |
| dc.identifier | http://dx.doi.org/10.1063/1.4857035 | |
| dc.identifier.uri | http://repositorioslatinoamericanos.uchile.cl/handle/2250/924305 | |
| dc.description | It has been demonstrated that the presence of oxide monolayers in semiconductor surfaces alters the electronic potential at surfaces and, consequently, can drastically affect the electronic transport features of a practical device such as a field effect transistor. In this work experimental and theoretical approaches to characterize Al/germanium nanowire Schottky devices by using samples covered with a thin oxide layer (2nm width) were explored. It was also demonstrated that the oxide layer on Ge causes a weak dependence of the metal work function on Schottky barrier heights indicating the presence of Fermi level pinning. From theoretical calculations the pinning factor S was estimated to range between 0.52 and 0.89, indicating a weak Fermi level pinning which is induced by the presence of charge localization at all nanowires' surface coming from interface states. (C) 2013 AIP Publishing LLC. | |
| dc.description | Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) | |
| dc.description | Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) | |
| dc.language | eng | |
| dc.publisher | American Institute of Physics (AIP) | |
| dc.relation | Journal of Applied Physics | |
| dc.rights | info:eu-repo/semantics/closedAccess | |
| dc.title | Disorder induced interface states and their influence on the AI/Ge nanowires Schottky devices | |
| dc.type | Otro | |
