dc.creatorDIPOLD, JESSICA
dc.creatorBORDON, CAMILA D.S.
dc.creatorMAGALHAES, EVELLYN S.
dc.creatorKASSAB, LUCIANA R.P.
dc.creatorJIMENEZ-VILLAR, ERNESTO
dc.creatorWETTER, NIKLAUS U.
dc.date2023
dc.date2023-07-24T12:54:52Z
dc.date2023-07-24T12:54:52Z
dc.date.accessioned2023-09-28T14:26:25Z
dc.date.available2023-09-28T14:26:25Z
dc.identifier2079-4991
dc.identifierhttp://repositorio.ipen.br/handle/123456789/34162
dc.identifier13
dc.identifier13
dc.identifier10.3390/nano13131972
dc.identifier0000-0002-9379-9530
dc.identifier66.5
dc.identifier79.50
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/9004370
dc.descriptionRandom lasers have been studied using many materials, but only a couple have used glass matrices. Here, we present a study of zinc tellurite and aluminum oxide doped with different percentages of neodymium oxide (4 wt.%, 8 wt.%, and 16 wt.%) and demonstrate for the first time random laser action at 1337 nm. Laser emission was verified and the laser pulse???s rise time and input???output power slope were obtained. A cavity composed of the sample???s pump surface and an effective mirror formed by a second, parallel layer at the gain-loss boundary was probably the main lasing mechanism of this random laser system. The reason for the absence of emission at 1064 nm is thought to be a measured temperature rise in the samples??? active volume.
dc.descriptionFunda????o de Amparo ?? Pesquisa do Estado de S??o Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Cient??fico e Tecnol??gico (CNPq)
dc.descriptionInstituto Nacional de Ci??ncia e Tecnologia de Fot??nica (INCT)
dc.descriptionInstituto de Pesquisas Energ??ticas e Nucleares (IPEN)
dc.descriptionFAPESP: 19/06334-4; 17/10765-5
dc.descriptionCNPq: 3088422017-0; 308526/2021-0; 302532/2019-6
dc.descriptionINCT: 465.763/2014
dc.descriptionIPEN: 2020.06.IPEN.33.PD
dc.format1-11
dc.relationNanomaterials
dc.rightsopenAccess
dc.title1337 nm emission of a Nd3+-doped TZA glass random laser
dc.typeArtigo de peri??dico
dc.coverageI


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