Facile, clean and rapid exfoliation of boron-nitride using a non-thermal plasma process

dc.creatorSOUZA, RODRIGO F.B. de
dc.creatorMAIA, VICTORIA A.
dc.creatorZAMBIAZZI, PRISCILLA J.
dc.creatorOTUBO, LARISSA
dc.creatorLAZAR, DOLORES R.R.
dc.creatorNETO, ALMIR O.
dc.date2021
dc.date2021-12-08T17:56:33Z
dc.date2021-12-08T17:56:33Z
dc.date.accessioned2023-09-28T14:19:47Z
dc.date.available2023-09-28T14:19:47Z
dc.identifier2590-0498
dc.identifierhttp://repositorio.ipen.br/handle/123456789/32364
dc.identifier12
dc.identifier10.1016/j.mtadv.2021.100181
dc.identifier0000-0001-8745-3421
dc.identifier0000-0001-7384-304X
dc.identifier84.20
dc.identifier84.00
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/9002584
dc.descriptionNon-Thermal Plasma source was used in this work to exfoliated boron-nitride (BN) powders. The generation of hexagonal BN nanosheets (h-BNNSs) few-layered was observed by TEM. The hBN exfoliation occurred along their transverse axis, preserving the hexagonal structure. The micrographs showed ordered lattice fringes with d-spacing of approximately 0.33 nm indicating the increase of (0 0 2) h-BNNSs crystal lattice planes, also confirmed by the relative peak intensity decrease in relation to the other peaks in XRD measures. The few amounts of layers were confirmed by intensity decrease, enlargement, and blue shift of E2 g vibrational mode in Raman spectra. Moreover, the appearance of the FTIR band corresponding to the hydroxyl group occurs due to large amounts of defects such as vacancy defects.
dc.descriptionConselho Nacional de Desenvolvimento Cient??fico e Tecnol??gico (CNPq)
dc.descriptionFunda????o de Amparo ?? Pesquisa do Estado de S??o Paulo (FAPESP)
dc.descriptionCNPq: 302709/2020-7
dc.descriptionFAPESP: 14/09087-4; 14/50279-4; 17/11937-4
dc.format1-5
dc.relationMaterials Today Advances
dc.rightsopenAccess
dc.subjectboron nitrides
dc.subjectplasma heating
dc.subjectfunction generators
dc.subjecttwo-dimensional systems
dc.titleFacile, clean and rapid exfoliation of boron-nitride using a non-thermal plasma process
dc.typeArtigo de peri??dico
dc.coverageI


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